| PART |
Description |
Maker |
| TLP813 |
PHOTO-INTERRUPTER INFRARED LED PHOTOTRANSISTOR
|
TOSHIBA
|
| TLP803 |
PHOTO INTERRUPTER INFRARED LED PHOTOTRANSISTOR
|
Toshiba Semiconductor
|
| TLP848 |
PHOTO INTERRUPTER INFRARED LED PHOTOTRANSISTOR
|
Toshiba Semiconductor
|
| TLP801A |
Photo .Interrupter Infrared LED Phototransistor
|
TOSHIBA
|
| TLP828 |
Photo-interrupter Which incorporates a GaAs infrared LED and a fast response Si Phototransistor in a Dust-proof package.
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| TLN107A E006145 |
INFRARED LED GaAS INFRARED EMITTER
From old datasheet system
INFRARED LED FOR PHOTO INTERRUTER
|
TOSHIBA[Toshiba Semiconductor]
|
| OED-PT8L OED-PT304R2 OED-PT23G |
PHOTOTRANSISTOR | DARLINGTON | 800NM PEAK WAVELENGTH | 5M | LED-2B
PHOTOTRANSISTOR | DARLINGTON | 850NM PEAK WAVELENGTH | 5M | LED-7B
PHOTOTRANSISTOR | DARLINGTON | 800NM PEAK WAVELENGTH | 5M | LED-7B 光电晶体管|达林顿| 800NM峰值波长| 500万|发光二极 7B
|
Lumex, Inc.
|
| IR26-51C IR26-51C_L110_TR8 IR26-51C/L110/TR8 IR26- |
1 ELEMENT, INFRARED LED, 940 nm
1.6mm round Subminiature Side Looking Infrared LED
|
EVERLIGHT ELECTRONICS CO LTD
Everlight Electronics Co., Ltd
|
| QSE213C QSE214C |
Plastic Silicon Infrared Phototransistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| QSB320F QSB320FTR |
SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR
|
FAIRCHILD[Fairchild Semiconductor]
|
| IR17-21C-TR8 IR17-21C_TR8 IR17-21C/TR8 |
1.4 mm, 1 ELEMENT, INFRARED LED, 940 nm
Infrared Chip LED
|
EVERLIGHT ELECTRONICS CO LTD
Everlight Electronics Co., Ltd
|
